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Transistors
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
0.40+0.10 -0.05
Unit: mm
0.16+0.10 -0.06
Features
* High transition frequency fT * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
3 1.50+0.25 -0.05 2.8+0.2 -0.3
1
2 (0.65)
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 50 150 150 -55 to +150 Unit V V V mA mW C C
1.1+0.2 -0.1
1.1+0.3 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: R
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio * Transition frequency Reverse transfer capacitance (Common base) Reverse transfer capacitance (Common emitter) Power gain Symbol VCBO VEBO VBE hFE fT Crb Cre GP Conditions IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = -2 mA VCB = 10 V, IE = -2 mA VCB = 10 V, IE = -15 mA, f = 200 MHz VCE = 6 V, IC = 0, f = 1 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz VCB = 10 V, IE = -1 mA, f = 200 MHz 25 800 1 300 0.8 1.0 20 1.5 Min 30 3 720 250 1 600 Typ Max Unit V V mV MHz pF pF dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Marking symbol T 800 to 1 400 RT S 1 000 to 1 600 RS No-rank 800 to 1 600 R
Product of no-rank is not classified and have no indication for rank.
0 to 0.1
0.40.2
5
Publication date: March 2003
SJC00116BED
1
2SC2480
PC Ta
240
IC VCE
24 IB = 300 A Ta = 25C
24
IC I B
VCE = 10 V Ta = 25C 20
Collector power dissipation PC (mW)
200
20
Collector current IC (mA)
160
16 200 A 12 150 A 100 A 50 A
Collector current IC (mA)
250 A
16
120
12
80
8
8
40
4
4
0
0
0 40 80 120 160
0
4
8
12
16
0
0
100
200
300
400
500
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (A)
IB VBE
400 350 300 VCE = 10 V Ta = 25C
60
IC VBE
25C 50 Ta = 75C VCE = 10 V -25C
hFE IC
240 VCE = 10 V
40
Forward current transfer ratio hFE
200
Collector current IC (mA)
Base current IB (A)
160 Ta = 75C 120 25C -25C
250 200 150 100 50 0
30
20
80
10
40
0
0
0.4
0.8
1.2
1.6
2.0
0
0.4
0.8
1.2
1.6
2.0
0 0.1
1
10
100
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
1 600 1 400
fT I E
Reverse transfer capacitance Cre (pF) (Common emitter)
VCB = 10 V Ta = 25C
Cre VCE
2.4 IC = 1 mA f = 10.7 MHz Ta = 25C
10
Transition frequency fT (MHz)
2.0
1 200 1 000 800 600 400 200
1.6
1
1.2
Ta = 75C 0.1 25C -25C
0.8
0.4
0.01 0.1
1
10
100
0 - 0.1
-1
-10
-100
0 0.1
1
10
100
Collector current IC (mA)
Emitter current IE (mA)
Collector-emitter voltage VCE (V)
2
SJC00116BED
2SC2480
Zrb IE
120 VCB = 10 V f = 2 MHz Ta = 25C
GP IE
40 35 30
12
NF IE
VCB = 10 V f = 100 MHz Rg = 50 Ta = 25C
VCB = 10 V f = 100 MHz Rg = 50 k Ta = 25C
Reverse transfer impedance Zrb ()
100
10
Noise figure NF (dB)
Power gain GP (dB)
80
8
25 20 15 10
60
6
40
4
20
2
5
0 - 0.1
-1
-10
0 - 0.1
-1
-10
-100
0 - 0.1
-1
-10
-100
Emitter current IE (mA)
Emitter current IE (mA)
Emitter current IE (mA)
bib gib
0
0
brb grb
48
300 500
bfb gfb
200
-10
- 0.4
Forward transfer susceptance bfb (mS)
Reverse transfer susceptance brb (mS)
yib = gib + jbib VCB = 10 V
yrb = grb + jbrb VCB = 10 V
yfb = gfb + jbfb VCB = 10 V 40 f = 200 MHz IE = -5 mA 32 -2 mA 300 500 600 16 900
Input susceptance bib (mS)
-20
IE = -2 mA f = 900 MHz -5 mA
- 0.8 600 -1.2 f = 900 MHz -2 mA IE = -5 mA
-30
600 500 300 200
24
-40
-1.6
-50
-2.0
8
-60
0
10
20
30
40
50
-2.4 -1.0
- 0.8
- 0.6
- 0.4
- 0.2
0
0 -60
-40
-20
0
20
40
Input conductance gib (mS)
Reverse transfer conductance grb (mS)
Forward transfer conductance gfb (mS)
bob gob
12 yob = gob + jbob VCE = 10 V 10 900
Output susceptance bob (mS)
8
600 IE = -2 mA 500 -5 mA
6
4
300
2
f = 200 MHz
0
0
0.4
0.8
1.2
1.6
2.0
Output conductance gob (mS)
SJC00116BED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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